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Ultra-Low VCE(sat) IGBT
IXGH 60N60 IXGK 60N60 IXGT 60N60
VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25C
Maximum Ratings 600 600 20 30 75 60 200 ICM = 100 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD (IXGH)
G
C E
TO-268 (IXGT)
G E (TAB)
TO-264 (IXGK) W C C C C g g g
G = Gate, E = Emitter,
G D S
D (TAB)
Mounting torque (M3)
1.13/10 Nm/lb.in. 300 6 10 4
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-264 TO-268
C = Collector, TAB = Collector
Features * International standard package JEDEC TO-247 AD, TO-264, TO-268 * New generation HDMOSTM process * Low VCE(sat) for minimum on-state conduction losses * High current handling capability * MOS Gate turn-on drive simplicity Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Low losses, high efficiency * High power density * High power, surface mount package
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 1.7 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
92796L (7/00)
(c) 2000 IXYS All rights reserved
1-4
IXGH 60N60 IXGK 60N60 IXGT 60N60
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 55 3700 VCE = 25 V, VGE = 0 V, f = 1 MHz 290 86 130 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30 45 50 25 300 360 8 50 25 3 650 550 17 600 570 15 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W (IXGH) (IXGK) 0.25 0.15 K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-247 AD (IXFH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
1.5 2.49
TO-264 AA (IXFK) Outline
TO-268AA (IXFT) (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXGH 60N60
IXGK 60N60 IXGT 60N60
100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5
TJ = 25C
350
TJ = 25C
VGE = 15V
13V
300
IC - Amperes
IC - Amperes
VGE = 15V 13V 11V 9V 7V
250 200 150
11V
9V
100 50 0
7V
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
200 175 150
VGE = 15V
1.8
VGE = 15V
IC = 120A
1.6
VCE (sat) - Normalized
IC - Amperes
125 100 75 50 25 0 0 1
1.4 1.2 1.0
IC = 30A
TJ = 25 C TJ = 125oC
o
IC = 60A
0.8 0.6 25
2
3
4
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
1.3
100
BV/VGE(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7
VGE(th) IC = 250A
BVCES IC = 250A
IC - Amperes
10
TJ = 125 C RG = 4.7W dV/dt < 5V/ns
o
1
0.1 0 100 200 300 400 500 600
0.6 -50 -25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees C
Fig. 5. Turn-off Safe Operating Area
Fig. 6. Temperature Dependence of BVCES & VGE(th)
(c) 2000 IXYS All rights reserved
3-4
IXGH 60N60
IXGK 60N60 IXGT 60N60
18
1000
TJ = 125C
40
RG = 10W
1000
TJ = 125C IC = 60A Eoff
tfi - nanoseconds
tfi - nanoseconds
750 500
30
tfi
800
tfi
16 14 12 10
0 10 20 30 40 50
Eoff - milliJoules
Eoff - millijoules
20
Eoff
600
250 0
0 20 40 60 80 100
10
400
0 120
200
IC - Amperes
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
15 12 10000
Fig. 8. Dependence of tfi and EOFF on RG.
IC = 60A VCE = 300V
Capacitance - picofards
Cies
VGE - Volts
1000
9 6 3 0 0 50 100 150 200 250
100
10 0 10 20 30 40
QG - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
1
Fig. 10. Junction Capacitance Curves
ZthJC (K/W)
0.1
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
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